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VT3045CBP

Vishay
Part Number VT3045CBP
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description New Product VT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Prot...
Datasheet PDF File VT3045CBP PDF File

VT3045CBP
VT3045CBP


Overview
New Product VT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
30 V at IF = 5.
0 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 3 • Halogen-free according to IEC 61249-2-21 definition VT3045CBP PIN 1 PIN 3 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF...



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