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CBS05F30

Toshiba Semiconductor
Part Number CBS05F30
Manufacturer Toshiba Semiconductor
Description Schottky Barrier Diode
Published Mar 29, 2012
Detailed Description Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward vol...
Datasheet PDF File CBS05F30 PDF File

CBS05F30
CBS05F30

Overview
Schottky Barrier Diode Silicon Epitaxial CBS05F30 1.
Applications • High-Speed Switching 2.
Features (1) Low forward voltage: VF(3) = 0.
38 V (typ.
) (2) Thin and compact packaging: Height = 0.
40mm(max) 3.
Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 500 mA Non-repetitive peak forward surge current IFSM (Note 2) 3 A Junction temperature Tj  125  Storage temperature Tstg  -55 to 125 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/curre...


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