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R6012FNX

Part Number	R6012FNX
Manufacturer	Rohm
Description	Drive Nch MOSFET
Published	Apr 3, 2012
Detailed Description	Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3...
Datasheet	R6012FNX PDF File

Overview

Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.
0 φ3.
2 4.
5 2.
8 2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage 　 VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
14.
0 2.
5 Features 1) Fast reverse recovery time (trr) 15.
0 12.
0 8.
0 1.
3 1.
2 0.
8 2.
54 (1) (2) (3) 2.
54 0.
75 2.
6 Application Switching  Inner circuit Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500  ∗1 www.
DataSheet.
co.
kr (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta  25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L≒ 500H, VDD=50V, Rg=25 ,starting Tch=25°C *3 Limited only by maximum temperature allowed.
Limits 600 30 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 12 48 12 48 6 9.
6 50 150 55 to 150  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.
5 Unit C / W www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/6 2011.
08 - Rev.
A Datasheet pdf - http://www.
DataSheet4U.
net/ R6012FNX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min.
600 3 3.
5 Typ.
0.
39 1300 890 45 30 37 77 20 35 10 15 Max.
100 100 5 0.
51 Unit nA V ...

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