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R6020FNX

Rohm
Part Number R6020FNX
Manufacturer Rohm
Description Drive Nch MOSFET
Published Apr 3, 2012
Detailed Description NotNeRewcDoemsimgennsded for R6020FNX Nch 600V 20A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 0.25 20A 8...
Datasheet PDF File R6020FNX PDF File

R6020FNX
R6020FNX

Overview
NotNeRewcDoemsimgennsded for R6020FNX Nch 600V 20A Power MOSFET Datasheet VDSS RDS(on) (Max.
) ID PD 600V 0.
25 20A 85W Features 1) Fast reverse recovery time (trr).
Outline TO-220FM Inner circuit (1) (2) (3) (2) 2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) *1 5) Drive circuits can be simple.
(3) 6) Parallel use is easy.
Packaging specifications 7) Pb-free lead plating ; RoHS compliant Packaging (1) Gate (2) Drain (3) Source *1 Body Diode Bulk Reel size (mm) - Application Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 500 - Marking R6020FNX Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 20 9.
9 80 30 26.
7 3.
5 10 85 150 55 to 150 15 V A A A V mJ mJ A W °C °C V/ns www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/13 2016.
02 - Rev.
D NotNeRewcDoemsimgennsded for R6020FNX Absolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V, ID = 20A Tj = 125°C Values 50 Unit V/ns Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Min.
Typ.
Max.
Unit - - 1.
47 °C/W - - 70 °C/W - - 265 °C Electrical characteristics(Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Values Min.
Typ.
Max.
Unit 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 20A - 700 - V Zero gate voltage d...


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