DatasheetsPDF.com

RB168M-40

Rohm
Part Number RB168M-40
Manufacturer Rohm
Description Schottky Barrier Diode
Published Apr 3, 2012
Detailed Description Data Sheet Schottky Barrier Diode RB168M-40 lApplications General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±0.1...
Datasheet PDF File RB168M-40 PDF File

RB168M-40
RB168M-40

Overview
Data Sheet Schottky Barrier Diode RB168M-40 lApplications General rectification lDimensions (Unit : mm) 1.
6±0.
1 0.
1±0.
1 　　　 0.
05 lLand size figure (Unit : mm) 1.
2 0.
85 lFeatures 1)Small power mold type.
(PMDU) 2)Low IR 3)High reliability 2.
6±0.
1 3.
5±0.
2 PMDU lConstruction Silicon epitaxial 0.
9±0.
1 lStructure 0.
8±0.
1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date lTaping specifications (Unit : mm) 4.
0±0.
1 2.
0±0.
05 φ 1.
55±0.
05 1.
75±0.
1 0.
25±0.
05 www.
DataSheet.
co.
kr 3.
5±0.
05 8.
0±0.
2 1.
81±0.
1 4.
0±0.
1 φ 1.
0±0.
1 3.
71±0.
1 1.
5MAX lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board.
180°Half sine wave Limits 40 40 1 30 150 -55 to +150 Unit V V A A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Min.
- Typ.
0.
60 0.
05 Max.
0.
65 0.
55 Unit V μA IF=1.
0A VR=40V Conditions www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/3 2011.
06 - Rev.
A Datasheet pdf - http://www.
DataSheet4U.
net/ 3.
05 ① RB168M-40 　 Data Sheet 1 Ta=75℃ 1000000 Ta=150℃ 100000 REVERSE CURRENT:IR(ｎA) Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(A) Ta=125℃ 0.
1 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 35 40 10000 Ta=75℃ 1000 100 10 Ta=-25℃ 1 0.
1 Ta=25℃ 100 0.
01 Ta=25℃ Ta=-25℃ 10 0.
001 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 600 Ta=25℃ VF=1A n=30pcs 100 90 REVERSE CURRENT:IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 300 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ VR=40V n=30pcs AVE:48.
6nA 280 270 260 250 240 230 220 210 200 IR DISPERSION MAP Ct DISPERSION MAP AVE:244.
4pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 590 80 70 60 50 40 30 20 10 580 AVE:569.
2mV ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)