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RB168M150

Part Number	RB168M150
Manufacturer	Rohm
Description	Schottky Barrier Diode
Published	Apr 3, 2012
Detailed Description	Data Sheet Schottky Barrier Diode RB168M150 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1...
Datasheet	RB168M150 PDF File

Overview

Data Sheet Schottky Barrier Diode RB168M150 Applications General rectification Dimensions (Unit : mm) 1.
6±0.
1 0.
1±0.
1 　　　 0.
05 Land size figure (Unit : mm) 1.
2 0.
85 2.
6±0.
1 3.
5±0.
2 Features 1)Small power mold type.
(PMDU) 2)High reliability PMDU Construction Silicon epitaxial planer Structure 0.
9±0.
1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.
8±0.
1 Taping dimensions (Unit : mm) 4.
0±0.
1 2.
0±0.
05 φ1.
55±0.
05 3.
5±0.
05 1.
75±0.
1 0.
25±0.
05 www.
DataSheet.
co.
kr 8.
0±0.
2 1.
81±0.
1 4.
0±0.
1 φ1.
0±0.
1 3.
71±0.
1 1.
5MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Business frequence, R-road, Tc=110°C max.
Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Limits 150 150 1 30 150 - 55 to +150 Unit V V A A °C °C Min.
- Typ.
0.
76 0.
11 Max.
0.
84 20 Unit V μA IF=1A VR=150V Conditions www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/4 2011.
09 - Rev.
A Datasheet pdf - http://www.
DataSheet4U.
net/ 3.
05 ① RB168M150 　 Data Sheet 1 Ta=150°C FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(µA) 1000 Ta=150°C Ta=125°C 100 Ta=125°C Ta=75°C 0.
1 10 Ta=75°C 1 Ta=25°C 0.
1 Ta=25°C Ta=−25°C 0.
01 200 400 600 800 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.
01 Ta=−25°C 0.
001 0.
0001 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 800 Ta=25°C IF=1A n=30pcs 790 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 780 100 770 AVE:756.
9mV 760 www.
DataSheet.
co.
kr 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 750 VF DISPERSION MAP 200 Ta=25°C VR=150V n=30pcs 150 AVE:106.
8nA 120 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 115 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 110 105 100 100 AVE:95.
0pF 95 50 IR DISPERSION MAP 90 Ct DISPERSION MAP ww...

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