RB228NS100
Schottky Barrier Diode
●Outline
VR
100
V
Io
30
A
IFSM
100
A
●Features High reliability Power mold type Cathode common dual type Super Low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB228NS100
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0. 5
110
V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature
VR
Reverse direct voltage
100
V
Io
60Hz half sin waveform，resistive load， Io/2 per diode，Tc=83℃Max.
30
A
IFSM
60Hz half sin waveform， non-repetitive，per diode，Ta=25℃
100
A
Tj
-
150
℃
Storage temperature
Tstg
-
-40 ～ 150
℃
...
RB228NS100 PDF File
