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RBQ10NS65A

Rohm
Part Number RBQ10NS65A
Manufacturer Rohm
Description Schottky Barrier Diode
Published Apr 3, 2012
Detailed Description Data Sheet Schottky Barrier Diode RBQ10NS65A lApplications General rectification lDimensions(Unit : mm) lLand size figu...
Datasheet PDF File RBQ10NS65A PDF File

RBQ10NS65A
RBQ10NS65A

Overview
Data Sheet Schottky Barrier Diode RBQ10NS65A lApplications General rectification lDimensions(Unit : mm) lLand size figure (Unit : mm) lGeneral rectification 1)Cathode Common Dual type.
（LPDS） 2)Low IR.
BQ10NS 65A ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① lTaping dimensions（Unit : mm） ② ③ www.
DataSheet.
co.
kr ●Absolute maximum ratings(Tc=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 65 VR Reverse voltage (DC) 65 Average rectified forward current (*1) 10 Io IFSM Forward current surge peak (60Hz・1cyc)(*2) 50 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C.
lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current Unit V V A A °C °C Symbol VF IR Min.
- Typ.
- Max.
0.
69 0.
15 Unit V mA IF=5A VR=65V Conditions www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All...


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