RBQ30NS45A
Schottky Barrier Diode
●Outline
VR 45 V
Io 30 A
IFSM 100 A
●Features High reliability Power mold type Cathode common dual type Low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
BQ30NS45A
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0. 5
45 V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1)
VR Reverse direct voltage
45 V
Io IFSM
60Hz half sin waveform，resistive load， Io/2 per diode，Tc=100℃Max.
60Hz half sin waveform， non-repetitive，per diode，Ta=25℃
30 100
A A
Tj -
150 ℃
Storage temperature
Tstg -
Note(1) To avoid occurrence of thermal ...
RBQ30NS45A PDF File
