DatasheetsPDF.com

RBQ30T45A

Rohm
Part Number RBQ30T45A
Manufacturer Rohm
Description Schottky Barrier Diode
Published Apr 3, 2012
Detailed Description Data Sheet Schottky Barrier Diode RBQ30T45A lApplications General rectification 　　　 lDimensions (Unit : mm) 4.5±0.3 　　　...
Datasheet PDF File RBQ30T45A PDF File

RBQ30T45A
RBQ30T45A

Overview
Data Sheet Schottky Barrier Diode RBQ30T45A lApplications General rectification 　　　 lDimensions (Unit : mm) 4.
5±0.
3 　　　 0.
1 10.
0±0.
3 　　　 0.
1 2.
8±0.
2 　　　 0.
1 lStructure ① 1.
3 0.
8 (1) (2) (3) 13.
5MIN lConstruction Silicon epitaxial planer 1.
2 5.
0±0.
2 8.
0±0.
2 12.
0±0.
2 15.
0±0.
4 　 0.
2 8.
0 0.
7±0.
1 0.
05 lFeatures 1)Cathode common type.
2)Low IR 3)High reliability 2.
6±0.
5 ROHM : TO220FN ① Manufacture Date www.
DataSheet.
co.
kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature (*1) Rating of per diode : Io/2 Tstg Limits 45 45 30 100 150 -40 to +150 Unit V V A A °C °C lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min.
Typ.
Max.
0.
65 450 Unit V mA IF=15A VR=45V Conditions www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/4 2011.
11 - Rev.
A Datasheet pdf - http://www.
DataSheet4U.
net/ RBQ30T45A 　 Data Sheet 100 100000 Ta=150°C 10000 REVERSE CURRENT:IR(μA) Ta=125°C Ta=150°C FORWARD CURRENT:IF(A) 10 1000 Ta=125°C 100 Ta=75°C 10 1 1 Ta=75°C Ta=25°C 0.
1 Ta=-25°C Ta=25°C 0.
1 Ta=-25°C 0.
01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.
01 0 10 20 30 40 50 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1000 FORWARD VOLTAGE:VF(mV) 600 590 580 570 560 550 540 530 520 510 www.
DataSheet.
co.
kr AVE:564.
4mV Ta=25°C IF=15A n=30pcs 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 VF DISPERSION MAP 100 90 80 REVERSE CURRENT:IR(mA) 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:36.
6mA Ta=25°C VR=45V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1600 1590 1580 AVE:1562.
4pF 1570 1560 1550 1540 1530 1520 1510 1500 Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V n=10pcs www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights res...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)