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RCD075N20

Rohm
Part Number RCD075N20
Manufacturer Rohm
Description N-Channel MOSFET
Published Apr 3, 2012
Detailed Description Data Sheet 10V Drive Nch MOSFET RCD075N20  Structure Silicon N-channel MOSFET r Features o 1) Low on-resistance. f 2...
Datasheet PDF File RCD075N20 PDF File

RCD075N20
RCD075N20

Overview
Data Sheet 10V Drive Nch MOSFET RCD075N20  Structure Silicon N-channel MOSFET r Features o 1) Low on-resistance.
f 2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
d 5) Parallel use is easy.
 Dimensions (Unit : mm) CPT3 (SC-63) 6.
5 5.
1 2.
3 0.
5 0.
9 5.
5 1.
5 0.
8Min.
2.
5 0.
75 0.
9 2.
3 0.
65 (1) (2) (3) 2.
3 0.
5 1.
0 1.
5 9.
5 e  Application d Switching n s  Packaging specifications e n Package Type Code m ig Basic ordering unit (pieces) RCD075N20 Taping TL 2500  m es  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit o Drain-source voltage D Gate-source voltage c Drain current Continuous Pulsed e w Source current (Body Diode) Continuous Pulsed R e Avalanche current Avalanche energy t N Power dissipation Channel temperature o Range of storage temperature VDSS 200 V VGSS 30 V ID *3 7.
5 A IDP *1 30 A IS *3 7.
5 A ISP *1 30 A IAS *2 3.
75 A EAS *2 4.
13 mJ PD *4 52 W Tch 150 C Tstg 55 to 150 C *1 Pw10s, Duty cycle1% N*2 L 500H, VDD=50V, RG=25, Tch=25C  Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE *3 Limited only by maximum channel temperature allowed.
*4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (j-c) * * TC=25°C * Limited only by maximum channel temperature allowed.
Limits 2.
36 Unit C / W www.
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com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/5 2016.
02 - Rev.
B RCD075N20 　 Data Sheet  Electrical characteristics (Ta = 25C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Gate-source leakage IGSS - - 100 nA VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 200 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - - 10 A VDS=200V, VGS=0V Gate threshold voltage VGS (th) 3.
25 - 5.
25 V VDS=10V, ID=1mA Static drain-source on-state resistance Forward transfer admittance Input capacitance r Output capacitance Reverse transfer capac...


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