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RCJ330N25

Rohm
Part Number RCJ330N25
Manufacturer Rohm
Description N-Channel MOSFET
Published Apr 3, 2012
Detailed Description Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET or Features f 1) Low on-resistance. 2)...
Datasheet PDF File RCJ330N25 PDF File

RCJ330N25
RCJ330N25

Overview
Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET or Features f 1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage d VGSS garanteed to be ±30V .
4) High package power.
 Dimensions (Unit : mm) LPTS 10.
1 4.
5 1.
3 9.
0 13.
1 1.
0 3.
0 1.
24 2.
54 0.
78 0.
4 5.
08 2.
7 (1) (2) (3) 1.
2 de Application n s Switching e n Packaging specifications m ig Package Type Code s Basic ordering unit (pieces) RCJ330N25 Taping TL 1000   Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE om e Absolute maximum ratings (Ta  25°C) D Parameter Symbol Limits Unit c Drain-source voltage Gate-source voltage e w Drain current Continuous Pulsed R e Source current (Body Diode) Continuous Pulsed t Avalanche current N Avalanche energy o Power dissipation (Tc=25C) Channel temperature NRange of storage temperature VDSS 250 V VGSS 30 V ID *3 33 A IDP *1 132 A IS *3 26 A ISP *1 104 A IAS *2 16.
5 A EAS *2 74.
8 mJ PD 211 W Tch 150 C Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.
 Thermal resistance Parameter Channel to Case * TC=25°C Symbol Limits Rth(j-c) * 0.
59 Unit C / W www.
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, Ltd.
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1/6 2016.
02 - Rev.
B RCJ330N25 　 Data Sheet  Electrical characteristics (Ta = 25C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Gate-source leakage IGSS - - 100 nA VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS 250 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - - 1 A VDS=250V, VGS=0V Gate threshold voltage VGS (th) 3 - 5 V VDS=10V, ID=1mA Static drain-source on-state resistance Forward transfer admittance Input capacitance r Output capacitance o Reverse transfer capacitance f Turn-on delay time Rise time Turn-off delay time d Fall time Total gate charge e Gate-source charg...


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