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DTA014EUB

Rohm
Part Number DTA014EUB
Manufacturer Rohm
Description 100mA/-50V Digital transistors
Published Apr 4, 2012
Detailed Description -100mA/-50V Digital transistors(with built-in resistors) DTA014EM / DTA014EEB / DTA014EUB Features 1) Built-in bias res...
Datasheet PDF File DTA014EUB PDF File

DTA014EUB
DTA014EUB


Overview
-100mA/-50V Digital transistors(with built-in resistors) DTA014EM / DTA014EEB / DTA014EUB Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
(See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
Dimensions (Unit : mm) VMT3 Abbreviated symbol : 30 EMT3F (3) Structure PNP epitaxial planar silicon transistor (Resistor built-in type) (1) (2) Abbreviated symbol : 30 UMT3F 0.
32 2.
0 0.
9 0.
53 0.
425 (3) Applications Inverter, Interface, Driver 1.
25 2.
1 (1) 0.
65 0.
65 1.
3 (2) 0.
13 Abbreviated symbol : 30 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTA014EM DTA014EEB DTA014EUB www.
DataSheet.
co.
kr  Equivalent circuit UMT3F Taping TL 3000 ○ IN R1 IN R2 GND(+) OUT VMT3 Taping T2L 8000 ○ - EMT3F Taping TL 3000 ○ - OUT GND(+)   R1=R2=10kΩ Absolute maximum (Ta=25C) Parameter Supply voltage Input voltage Collector current *1 Output current Power dissipation *2 Junction temperature Range of storage temperature *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land Symbol VCC VIN IC(max) IO PD Tj Tstg M Limits(DTA014E □) EB UB -50 -40 10 -100 -50 150 150 -55 to +150 200 Unit V V V mA mA mW C C www.
rohm.
com ©2011 ROHM Co.
, Ltd.
All rights reserved.
1/2 2011.
08 - Rev.
A Datasheet pdf - http://www.
DataSheet4U.
net/ 0.
53 0.
425 DTA014EM / DTA014EEB / DTA014EUB Electrical characteristics (Ta=25 C) Parameter Symbol Input voltage Output voltage Input current Output current DC current gain Transition frequency * Input resistance Resistance ratio * Characteristics of built-in transistor   Max.
-0.
8 -0.
15 -0.
88 -500 13 1.
2 Unit V V V mA nA MHz kΩ ...



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