DatasheetsPDF.com

2SC3982

Panasonic Semiconductor
Part Number 2SC3982
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed swit...
Datasheet PDF File 2SC3982 PDF File

2SC3982
2SC3982

Overview
Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.
0±0.
5 Unit: mm φ 3.
3±0.
2 5.
0±0.
3 3.
0 6.
0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 900 1000 900 1000 800 7 15 10 5 150 3.
5 150 –55 to +150 Unit V 26.
0±0.
5 10.
0 1.
5 2.
0 4.
0 1.
5 20.
0±0.
5 2.
5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC3982 2SC3982A 2SC3982 VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg Symbol VCBO 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 2.
7±0.
3 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 emitter voltage 2SC3982A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V V A A A W ˚C ˚C 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 2SC3982 2SC3982A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.
1A VCE = 5V, IC = 4A IC = 4A, IB = 0.
8A IC = 4A, IB = 0.
8A VCE = 5V, IC = 1A, f = 1MHz IC = 4A, IB1 = 0.
8A, IB2 = –1.
6A, VCC = 250V 15 0.
7 3.
0 0.
3 800 8 6 1.
5 1.
5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V 2.
0 1.
5 3.
0 1 Power Transistors PC — Ta 200 12 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.
5W) IB=2A 10 2SC3982, 2SC3982A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.
3 0.
1 0.
03 0.
01 0.
1 25˚C TC=100˚C –25˚C VCE(sat) — IC Collector po...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)