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SP8K3

Part Number	SP8K3
Manufacturer	Rohm
Description	Transistor
Published	Apr 12, 2012
Detailed Description	SP8K3 Transistors Switching (30V, 7.0A) SP8K3 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Smal...
Datasheet	SP8K3 PDF File

Overview

SP8K3 Transistors Switching (30V, 7.
0A) SP8K3 zFeatures 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication Power switching, DC / DC converter.
zExternal dimensions (Unit : mm) SOP8 5.
0±0.
2 (5) (8) 6.
0±0.
3 3.
9±0.
15 zStructure Silicon N-channel MOS FET 1.
5±0.
1 0.
15 1.
27 0.
4±0.
1 0.
1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) It is the same ratings for the Tr.
1 and Tr.
2.
www.
DataSheet.
co.
kr zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw 10µs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD.
Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits 30 20 ±7.
0 ±28 1.
6 6.
4 2 150 −55 to +150 Unit V V A A A A W °C °C Max.
1.
75 ∗1 ∗1 ∗2 ∗2 ∗2 0.
5±0.
1 (1) (4) 0.
2±0.
1 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.
Use the protection circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-a) Limits 62.
5 Unit °C / W ∗ 1/3 Datasheet pdf - http://www.
DataSheet4U.
net/ SP8K3 Transistors zElectrical characteristics (Ta=25°C) It is the same characteristics for the Tr.
1 and Tr.
2.
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off del...

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