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SSE90P06-08P

SeCoS
Part Number SSE90P06-08P
Manufacturer SeCoS
Description N-Channel Enhancement Mode MosFET
Published Apr 13, 2012
Detailed Description SSE90P06-08P Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Prod...
Datasheet PDF File SSE90P06-08P PDF File

SSE90P06-08P
SSE90P06-08P


Overview
SSE90P06-08P Elektronische Bauelemente -90A , -60V , RDS(ON) 12mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
D C TO-220P B R T FEATURES Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe TO-220P saves board space.
Fast Switch Speed.
High performance trench technology.
G E A S F H I J K L U X M P APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
P-Channel D2 www.
DataSheet.
co.
kr N O V Q Q W 1 2 3 REF.
A B C D E F G H I J K L Millimeter Min.
Max.
7.
90 8.
10 9.
45 9.
65 9.
87 10.
47 11.
50 1.
06 1.
46 2.
60 3.
00 6.
30 6.
70 8.
35 8.
75 14.
7 15.
3 1.
60 Typ.
1.
10 1.
30 1.
17 1.
37 REF.
M N O P Q R S T U V W X Millimeter Min.
Max.
1.
50 0.
75 0.
95 0.
66 0.
86 13.
50 14.
50 2.
44 3.
44 3.
50 3.
70 1.
15 1.
45 4.
30 4.
70 2.
7 1.
89 3.
09 0.
40 0.
60 2.
60 3.
60 G1 S3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TC=25°C ID IDM IS TC=25°C PD TJ, TSTG Ratings -60 ±20 -90 -390 -110 300 -55~175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient Maximum Junction to Case Notes: 1 Package Limited.
2 Pulse width limited by maximum junction temperature.
1 RθJA RθJC 62.
5 °C / W 0.
5 http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
25-Nov-2011 Rev.
A Page 1 of 2 Datasheet pdf - http://www.
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