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SSE90N08-08

SeCoS
Part Number SSE90N08-08
Manufacturer SeCoS
Description N-Channel Enhancement Mode MosFET
Published Apr 13, 2012
Detailed Description SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product...
Datasheet PDF File SSE90N08-08 PDF File

SSE90N08-08
SSE90N08-08

Overview
SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free TO-220P FEATURES Low RDS(on) trench technology.
Low thermal impedance Fast Switch Speed.
E G D C B R T A S APPLICATIONS White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits H F J K L I U X M P N O V Q Q W 1 2 3 N-Channel D2 REF.
A B C D E F G H I J K L G1 S3 www.
DataSheet.
co.
kr Millimeter Min.
Max.
7.
90 8.
10 9.
45 9.
65 9.
87 10.
47 11.
50 1.
06 1.
46 2.
60 3.
00 6.
30 6.
70 8.
35 8.
75 14.
7 15.
3 1.
60 Typ.
1.
10 1.
30 1.
17 1.
37 REF.
M N O P Q R S T U V W X Millimeter Min.
Max.
1.
50 0.
75 0.
95 0.
66 0.
86 13.
50 14.
50 2.
44 3.
44 3.
50 3.
70 1.
15 1.
45 4.
30 4.
70 2.
7 1.
89 3.
09 0.
40 0.
60 2.
60 3.
60 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25°C ID IDM IS TA=25°C PD TJ, TSTG Ratings 80 ±20 90 350 120 300 -55~175 Unit V V A A A W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Junction to Ambient 1 t≦10sec RθJA Steady State 62.
5 °C / W 0.
5 Notes: 1 Package Limited.
2 Pulse width limited by maximum junction temperature.
http://www.
SeCoSGmbH.
com/ Any changes of specification will not be informed individually.
14-Dec-2011 Rev.
A Page 1 of 4 Datasheet pdf - http://www.
DataSheet4U.
net/ SSE90N08-08 Elektronische Bauelemente 90A , 80V , RDS(ON) 11mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Symbol Min.
Typ.
Max.
Unit V nA µA Teat Conditions VDS=VGS, ID=250µA VDS=0, VGS=±20V VDS=64V, VGS=0 ...


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