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WFP3205T

Winsemi
Part Number WFP3205T
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFP3205T Silicon N-Channel MOSFET Features ■ 109A,60V,...
Datasheet PDF File WFP3205T PDF File

WFP3205T
WFP3205T

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr WFP3205T Silicon N-Channel MOSFET Features ■ 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical 50nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology.
This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.
This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1) Parameter Value 60 109 80 390 ±20 20 5.
0 150 1.
0 -55~150 300 Units V A A A V mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.
5 - Max 1.
0 62 Units ℃/W ℃/W ℃/W Rev.
A Jun.
2011 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr WFP3205T Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-in Delay time Switching time Fall time Turn-off Delay time Total ga...


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