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5HB03N8

Winsemi
Part Number 5HB03N8
Manufacturer Winsemi
Description 30V SO8 Complementary enhancementmode MOSFET H-Bridge
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementar...
Datasheet PDF File 5HB03N8 PDF File

5HB03N8
5HB03N8

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 5HB03N8 ment mode MOSFET H-Bridge 30V SO8 Complementary enhance enhancem Summary vice De Dev V(BR)D SS (BR)DS QG RDS(on) 25mΩ @ VGS= 10V N-CH 30V 9.
0nC 45mΩ @ VGS= 4.
5V 50m Ω @ VGS= -10V P-CH -30V 12.
7nC 75mΩ @ VGS= -4.
5V -3.
3A 3.
9A -4.
1A ID TA= 25°C 5.
0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.
5 V) gate drive P1D/N1D P2D/N2D Applications • • N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information vice De Dev 5HB03N8 Reel size es) (inch (inche 13 Tape width (mm) 12 nti ty Qua Quan tit per reel 2,500 Device marking WFS 5HB03N8 Issue 1.
0 - April 2010 1 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 5HB03N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current ...


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