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WFU1N60

Winsemi
Part Number WFU1N60
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 1N60 WFU WFU1 Silicon N-Channel MOSFET Features � � � ...
Datasheet PDF File WFU1N60 PDF File

WFU1N60
WFU1N60

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 1N60 WFU WFU1 Silicon N-Channel MOSFET Features � � � � � 1.
3A,600V,RDS(on)(Max 8.
5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.
1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derati...


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