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WFU2N60B

Winsemi
Part Number WFU2N60B
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr B WFU2N60 WFU2N60B Silicon N-Channel MOSFET Features �...
Datasheet PDF File WFU2N60B PDF File

WFU2N60B
WFU2N60B

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr B WFU2N60 WFU2N60B Silicon N-Channel MOSFET Features � � � � � 2A,600V,RDS(on)(Max 5.
0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply .
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 2.
0 1.
3 8 ±30 140 6.
4 5.
5 46 0.
35 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min 0.
5 - Typ - Max 2.
7 62.
5 Units ℃/W ℃/W ℃/W Rev.
A Nov.
2010 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr B WFU2N60 WFU2N60B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,V GS=0V Min ±30 600 2 - Type - Max ±100 10 100 Unit nA V µA µA V V Ω S Drain cut -off current IDSS VDS=480V,Tc=125℃ Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse tran...


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