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WFU4N60

Winsemi
Part Number WFU4N60
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U4N60 WF WFU Silicon N-Channel MOSFET Features ■ 4A,60...
Datasheet PDF File WFU4N60 PDF File

WFU4N60
WFU4N60

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr U4N60 WF WFU Silicon N-Channel MOSFET Features ■ 4A,600V.
RDS(on)(Max 2.
5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.
This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature (Note 2) (Note 1) (Note 3) (Note1) 2.
5 16 ±30 240 10 4.
5 80 0.
78 -55~150 300 A A V mJ mJ V/ns W W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 600 4 Units V A Channel Temperature Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 1.
56 50 Units ℃/W ℃/W ℃/W - - 110 *When mounted on the minimum pad size recommended(PCB Mount) Rev.
A Nov.
2010 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr U4N60 WF WFU Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V Min ±30 600 2 - Type 1.
8 545 7 70 10 35 45 20 16 3.
4 7 Max ±100 10 100 4 2.
5 670 10 90 30 80...


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