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WFU5N60

Winsemi
Part Number WFU5N60
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr WFU5N60 Silicon N-Channel MOSFET Features � � � � � 4....
Datasheet PDF File WFU5N60 PDF File

WFU5N60
WFU5N60

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr WFU5N60 Silicon N-Channel MOSFET Features � � � � � 4.
5A,600V,RDS(on)(Max2.
5Ω)@VGS=10V Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well full bridge resonant topology line a mode power suited for half bridge and electronic lamp ballast, high efficiency switched supplies, active power factor correction.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 4.
5 3.
0 20 ±30 300 12 4.
5 51 0.
39 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.
5 83 Units ℃/W ℃/W Rev.
A Apr.
2012 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr WFU5N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type 2.
1 4.
0 520 9 70 13 45 25 35 Max ±100 10 100 4 2.
5 670 10.
5 90 35 100 Unit nA V µA µA V V Ω S Drain Cut -off current IDSS VDS=480V,Tc=125℃ Drain -source breakdown voltage Gate thresh...


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