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WFU830

Winsemi
Part Number WFU830
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr U830 WF WFU Silicon N-Channel MOSFET Features ■ 4.5A,5...
Datasheet PDF File WFU830 PDF File

WFU830
WFU830

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr U830 WF WFU Silicon N-Channel MOSFET Features ■ 4.
5A,500V,RDS(on)(Max 1.
5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.
38 -55~150 300 W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 500 4.
5 2.
9 18 ±30 300 7.
5 4.
5 48 Units V A A A V mJ mJ V/ns W Channel Temperature Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 2.
6 50 110 Units ℃/W ℃/W ℃/W *When mounted on the minimum pad size recommended(PCB Mount) Rev.
A Nov.
2010 Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr U830 WF WFU Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain−source ON resistance Forward Transconductance Input c...


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