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WFW13N50

Winsemi
Part Number WFW13N50
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 13N5 0 WFW FW13N5 13N50 con N-Ch annel MOS FET Sili li...
Datasheet PDF File WFW13N50 PDF File

WFW13N50
WFW13N50

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 13N5 0 WFW FW13N5 13N50 con N-Ch annel MOS FET Sili lic Cha OSF Features ■ 13A,500V, RDS(on)(Max0.
46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.
This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.
56 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Sing...


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