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SSM85T03GH

Silicon
Part Number SSM85T03GH
Manufacturer Silicon
Description N-channel Enhancement-mode Power MOSFET
Published Apr 30, 2012
Detailed Description SSM85T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; R...
Datasheet PDF File SSM85T03GH PDF File

SSM85T03GH
SSM85T03GH

Overview
SSM85T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.
D BV DSS R DS(ON) ID 30V 6mΩ 75A G S DESCRIPTION The SSM85T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
The through-hole version, the SSM85T03J in TO-251, is available for low-footprint vertical mounting.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability.
G D S TO-252 (H) G D S TO-251 (J) ABSOLUTE MAXIMUM RATINGS www.
DataSheet.
co.
kr Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 30 ± 20 75 55 350 107 0.
7 3 Units V V A A A W W/°C mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 29 -55 to 175 -55 to 175 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 1.
4 110 Unit °C/W °C/W 5/17/2005 Rev.
2.
3 www.
SiliconStandard.
com 1 of 5 Datasheet pdf - http://www.
DataSheet4U.
net/ SSM85T03GH,J ELECTRICAL CHARACTERISTICS @ Tj = 25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
30 1 Typ.
0.
018 Max.
Units 6 10 3 1 500 ±100 52 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA VGS=10V, ID=45A VGS=4.
5V, ID=30A 32 33 7.
5 24 11.
2 77 35 67 550 380 VGS(th) gfs IDSS IGSS Qg...


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