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RJK6034DPD-E0

Part Number	RJK6034DPD-E0
Manufacturer	Renesas
Description	N-Channel Power MOSFET
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(o...
Datasheet	RJK6034DPD-E0 PDF File

Overview

Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 9.
8  typ.
(at ID = 0.
5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0553EJ0100 Rev.
1.
00 Oct 13, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.
DataSheet.
co.
kr (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area 2.
Value at Tc = 25C 3.
STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse)Note1 IAP Note3 Pch Note2 ch-c Tch Tstg Ratings 600 30 1 2 1 36.
7 3.
4 150 –55 to +150 Unit V V A A A W C/W C C R07DS0553EJ0100 Rev.
1.
00 Oct 13, 2011 Page 1 of 6 Datasheet pdf - http://www.
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RJK6034DPD-E0 N-Channel Power MOSFET - Renesas

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