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RJP30E3DPP-M0

Renesas
Part Number RJP30E3DPP-M0
Manufacturer Renesas
Description N-Channel Power MOSFET
Published May 2, 2012
Detailed Description Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate te...
Datasheet PDF File RJP30E3DPP-M0 PDF File

RJP30E3DPP-M0
RJP30E3DPP-M0

Overview
Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0353EJ0200 Rev.
2.
00 Apr 15, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 E www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
Tc = 25°C Symbol VCES VGES IC ic(peak) Note1 PC Note2 θj-c Tj Tstg Ratings 360 ±30 40 250 30 4.
17 150 –55 to +150 Unit V V A A W °C/ W °C °C R07DS0353EJ0200 Rev.
2.
00 Apr 15, 2011 Page 1 of 6 Datasheet pdf - http://www.
DataSheet4U.
net/ RJP30E3DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min — — 2.
5 — — — — — — — — — — — Typ — — — 1.
6 1700 85 40 52 9 15 0.
04 0.
12 0.
09 0.
15 Max 1 ±100 5 2.
1 — — — — — — — — — — Unit μA nA V V pF pF pF nC nC nC μs μs μs μs Test Conditions VCE = 360 V, VGE = 0 VGE = ± 30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 150 V IC = 40 A IC = 40 A RL = 4 Ω VGE = 15 V RG = 5 Ω Notes: 3.
Pulse test.
www.
DataSheet.
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kr R07DS0353EJ0200 Rev.
2.
00 Apr 15, 2011 Page 2 of 6 Datasheet pdf - http://www.
DataSheet4U.
net/ RJP30E3DPP-M0 Preliminary Main Characteristi...


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