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RJP30K3DPP-M0

Part Number	RJP30K3DPP-M0
Manufacturer	Renesas
Description	N-Channel Power MOSFET
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate an...
Datasheet	RJP30K3DPP-M0 PDF File

Overview

Preliminary Datasheet RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.
1V typ High speed switching tr = 90 ns typ, tf = 250 ns typ Low leak current ICES = 1 A max Isolated package TO-220FL R07DS0501EJ0100 Rev.
1.
00 Jul 05, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1.
Gate 2.
Collector 3.
Emitter 1 2 3 E www.
DataSheet.
co.
kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal im...

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RJP30K3DPP-M0 N-Channel Power MOSFET - Renesas

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