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RJP4009ANS

Part Number	RJP4009ANS
Manufacturer	Renesas
Description	N-Channel Power MOSFET
Published	May 2, 2012
Detailed Description	Preliminary Datasheet RJP4009ANS Nch IGBT for Strobe Flash Features • • • • • • Small surface mount package (VSON-8) VC...
Datasheet	RJP4009ANS PDF File

Overview

Preliminary Datasheet RJP4009ANS Nch IGBT for Strobe Flash Features • • • • • • Small surface mount package (VSON-8) VCES: 400 V ICM: 150 A @Tc = 70°C, CM = 400 μF Drive voltage: 2.
5 V to 6 V (MAX) Pb-free Halogen-free R07DS0370EJ0200 Rev.
2.
00 Apr 27, 2011 Outline RENESAS Package code: PVSN0008JA-A (Package name: VSON-8) 5 8 4 1 1 2 3 4 8 7 6 5 1, 2, 3 : Emitter 4 : Gate 5, 6, 7, 8 : Collector Applications Strobe flash for cameras www.
DataSheet.
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kr Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector current (Pulse) Power dissipation Junction temperature Storage temperature Symbol VCES VGES ICM Pj Tj Tstg Ratings 400 ±6 150 1.
8 –40 to +150 –40 to +150 Unit V V A W °C °C Conditions VGE = 0 V VCE = 0 V CM = 400 μF (see performance curve) R07DS0370EJ0200 Rev.
2.
00 Apr 27, 2011 Page 1 of 4 Datasheet pdf - http://www.
DataSheet4U.
net/ RJP4009ANS Preliminary Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol ICES IGES VGE(th) VCE(sat) Cies Min.
— — 0.
4 — — Typ.
— — 0.
6 4.
0 5500 Max.
1 ±10 1.
2 9.
0 — Unit μA μA V V pF Test conditions VCE = 400 V, VGE = 0 V VGE = ±6 V, VCS = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 2.
5 V VCE = 25 V, VGE = 0 V, f = 1 MHz Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Circuit) 200 Pulse Collector Current ICM (A) 150 100 50 0 0 1 2 3 4 www.
DataSheet.
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kr 5 6 7 Gate - Emitter Voltage VGE (V) R07DS0370EJ0200 Rev.
2.
00 Apr 27, 2011 Page 2 of 4 Datasheet pdf - http://www.
DataSheet4U.
net/ RJP4009ANS Preliminary Application Example VCM Trigger Transformer VCM Maximum Operation Conditions ICP CM VGE Xe Tube CM + – 8 7 6 5 IGBT driver 1 2 3 4 Precautions on Usage 1.
IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully to...

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