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FLL200IB-3

Eudyna Devices
Part Number FLL200IB-3
Manufacturer Eudyna Devices
Description (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
Published May 14, 2012
Detailed Description FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5...
Datasheet PDF File FLL200IB-3 PDF File

FLL200IB-3
FLL200IB-3

Overview
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.
5dBm (Typ.
) High Gain: G1dB = 13.
0dB (Typ.
)@1.
8GHz (FLL200IB-1) High PAE: ηadd = 34% (Typ.
) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch www.
DataSheet.
co.
kr Condition Rating 15 -5 Unit V V W °C °C Tc = 25°C 83.
3 -65 to +175 175 Fujitsu...


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