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AM2340NE

Analog Power
Part Number AM2340NE
Manufacturer Analog Power
Description N-Channel 40-V (D-S) MOSFET
Published May 14, 2012
Detailed Description Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM2340NE PDF File

AM2340NE
AM2340NE


Overview
Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • AM2340NE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 43 @ VGS = 10V 40 50 @ VGS = 4.
5V 55 @ VGS = 3.
5V ID (A) 5.
2 4.
2 4.
0 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology ESD Protected 2000V o G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol Limit Units Parameter 40 Drain-Source Voltage VDS V VGS ±20 Gate-Source Voltage www.
DataSheet.
co.
kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C a o o ID IDM IS 5.
2 4.
1 30 1.
6 1.
3 0.
8 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t <= 5 sec RθJA Maximum 100 166 Units o o Steady-State C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2340NE_A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM2340NE Param eter Static G ate-Threshold V oltage G ate-B ody L eakage Zero G ate V oltage D rain C urrent O n-State D rain C urrent A A Sym bol V GS(th) IGSS IDSS ID(on) rDS(on) gfs V SD Q g Q gs Q gd td(on) tr td(off) tf Test Conditions V DS = V GS, ID = 250 uA V ,V DS = 0 V GS = 20 V Lim its Unit Min Typ Max 1 ±10 V uA uA A ,V V DS = 32 V GS = 0 V V ,V , TJ = 55oC DS = 32 V GS = 0 V 1 25 20 43 50 40 0.
7 4.
0 1.
1 1.
4 16 5 23 3 D rain-Source O n-R esis...



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