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AM30N08-80D

Analog Power
Part Number AM30N08-80D
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power N-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM30N08-80D PDF File

AM30N08-80D
AM30N08-80D

Overview
Analog Power N-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM30N08-80D PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 82 @ VGS = 10V 80 110 @ VGS = 4.
5V ID (A) 21 18 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 80 V ±20 Gate-Source Voltage VGS www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current Power Dissipation a b a o TC =25 C ID 21 40 30 50 IDM a o A A W o Continuous Source Current (Diode Conduction) IS TC =25 C P D Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Case a Maximum 50 3.
0 Units o o RθJA RθJC C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM30N08-80_A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM30N08-80D SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol VGS(th) IGSS IDSS ID(on) A Test Conditions VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V Limits Unit Min Typ Max 1.
0 ±100 o V nA uA A VDS = 64 V, VGS = 0 V VDS = 64 V, VGS = 0 V, T J = 55 C 1 25 34 82 110 4.
4 1.
1 19 3 9.
5 25 60 65 45 Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage A rDS(on) gfs VSD Qg Qgs Qgd td(o...


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