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AM30N10-70D

Analog Power
Part Number AM30N10-70D
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impe...
Datasheet PDF File AM30N10-70D PDF File

AM30N10-70D
AM30N10-70D

Overview
Analog Power AM30N10-70D N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 4.
5V VDS (V) 100 ID(A) 21 19 ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 21 IDM Pulsed Drain Current b 100 IS Continuous Source Current (Diode Conduction) 30 T =25°C P 50 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range www.
DataSheet.
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kr Units V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case a Symbol Maximum RθJA 50 RθJC 3 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction te...


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