DatasheetsPDF.com

AM3445P

Analog Power
Part Number AM3445P
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM3445P PDF File

AM3445P
AM3445P

Overview
Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology o AM3445P PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.
038 @ VGS = -4.
5V -20 0.
054 @ VGS = -2.
5V 0.
072 @ VGS = -1.
8V 1 2 3 ID (A) -5.
6 -4.
8 -4.
0 6 5 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -20 V ±8 Gate-Source Voltage VGS www.
DataSheet.
co.
kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -5.
6 -4.
5 ±20 -1.
7 2.
0 1.
3 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RT HJA Maximum Units 62.
5 o t <= 5 sec C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM3445_B Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power o AM3445P SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) A Test Conditions VGS = 0 V, ID = -250 uA VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±8 V Min -20 -0.
45 Limits Unit Typ Max V ±100 nA uA A VDS = -16 V, VGS = 0 V VDS = -20 V, VGS = 0 V, T J = 55oC -1 -5 -20 24 30 43 23 -0.
70 19.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)