DatasheetsPDF.com

AM3808NE

Analog Power
Part Number AM3808NE
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power AM3808NE Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal imp...
Datasheet PDF File AM3808NE PDF File

AM3808NE
AM3808NE


Overview
Analog Power AM3808NE Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = 4.
5V 28 @ VGS = 2.
5V VDS (V) 20 ID(A) 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 6 ID Continuous Drain Current a TA=100°C 3.
6 IDM Pulsed Drain Current b 22 a I 1 Continuous Source Current (Diode Conduction) S T =25°C 0.
83 A PD Power Dissipation a TA=100°C 0.
3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.
DataSheet.
co.
kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 110 RθJA 150 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM3808NE_1A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85°C VDS = 5 V, VGS = 4.
5 V VGS = 4.
5 V, ID = 6 A VGS = 2.
5 V, ID = 5 A VDS = 15 V, ID = 6 A IS = 1.
0 A, VGS = 0 V Dynamic VDS = 10 V, VGS = 4.
5 V, ID = 6 A Min 20 Typ AM3808NE Max Unit V uA uA A ±10 1 30 10 20 28 10 0.
7 13.
5 0.
9 5.
4 6 12 65 35 6...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)