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AM5480N

Analog Power
Part Number AM5480N
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power N-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM5480N PDF File

AM5480N
AM5480N

Overview
Analog Power N-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
AM5480N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 82 @ VGS = 10V 80 115 @ VGS = 4.
5V DFN2x3-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D G ID (A) ±5.
4 ±4.
6 D • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN2x3-8PP saves board space Fast switching speed High performance trench technology S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage VDS 80 V ±20 Gate-Source Voltage VGS www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±5.
4 ±4.
4 ±25 2 3.
5 2 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA t <= 10 sec Steady State Maximum 35 81 Units o o C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM5480_A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM5480N SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol VGS(th) IGSS IDSS ID(on) A Test Conditions VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V Min 1 Limits Unit Typ Max ±100 nA uA A VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, T J = 55oC 1 10 20 86 115 11 1.
1 3.
6 1.
8 1.
3 9 10 21 8 Drain-Sour...


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