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AM6922NH

Analog Power
Part Number AM6922NH
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trenc...
Datasheet PDF File AM6922NH PDF File

AM6922NH
AM6922NH


Overview
Analog Power Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSSOP-8 saves board space Fast switching speed High performance trench technology AM6922NH PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.
018 @ VGS = 4.
5 V 20 0.
024 @ VGS = 2.
5V 0.
034 @ VGS = 1.
8V TSSOP-8 Top View D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 G1 S1 N-Channel MOSFET D ID (A) 6.
7 5.
8 4.
9 D G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM 6.
7 5.
5 ±30 1.
5 1.
2 0.
8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RthJA Typ 72 100 Max 83 120 o t <= 10 sec Steady State C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM6922NH_A Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM6922NH SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Test Conditions VGS = VDS, ID = 250 uA Min 0.
4 Typ Max Unit V VDS = 0 V, VGS = ± 8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 5...


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