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AM7334N

Analog Power
Part Number AM7334N
Manufacturer Analog Power
Description MOSFET
Published May 14, 2012
Detailed Description Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM7334N PDF File

AM7334N
AM7334N

Overview
Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology AM7334N PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 8.
5 @ VGS = 10V 30 11.
5 @ VGS = 4.
5V DFN3x3-8PP Top View S S S G 1 2 3 4 8 7 6 5 D D D D ID (A) 17 15 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS Drain-Source Voltage 30 V ±20 Gate-Source Voltage VGS www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM ±17 ±12 ±40 2 3.
5 2 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Case a Maximum Junction-to-Ambient a Symbol t <= 5 sec t <= 5 sec RθJC RθJA Maximum 25 50 Units o o C/W C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM7334_B Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM7334N SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V o Symbol Test Conditions...


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