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TT8J21

Rohm
Part Number TT8J21
Manufacturer Rohm
Description MOSFET
Published May 14, 2012
Detailed Description 1.5V Drive Pch+Pch MOSFET TT8J21 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) TSST8 (8) (7) (6) (5) zFea...
Datasheet PDF File TT8J21 PDF File

TT8J21
TT8J21


Overview
1.
5V Drive Pch+Pch MOSFET TT8J21 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) TSST8 (8) (7) (6) (5) zFeatures 1) Low On-resistance.
2) High Power Package.
3) Low voltage drive.
(1.
5 V) (1) (2) (3) (4) Abbreviated symbol : J21 zApplications Switching Each lead has same dimensions zPackaging specifications Package Type TT8J21 Code Basic ordering unit (pieces) Taping TR 3000 zInner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 www.
DataSheet.
co.
kr (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) > Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 ∗2 PD Tch Tstg Limits −20 ±10 ±2.
5 ±10 −0.
8 −10 1.
25 1.
0 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol ∗ Limits 100 125 Unit °C / W / TOTAL °C / W / ELEMENT Rth(ch-a) www.
rohm.
com c 2009 ROHM Co.
, Ltd.
All rights reserved.
○ 1/5 2009.
01 - Rev.
A Datasheet pdf - http://www.
DataSheet4U.
net/ TT8J21 zElectrical characteristics (Ta=25°C) > Parameter Symbol Min.
IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.
3 − Static drain-source on-state − ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 2.
5 Input capacitance − Ciss Output capacitance Coss − Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate...



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