DatasheetsPDF.com

TGA2501-TS

TriQuint Semiconductor
Part Number TGA2501-TS
Manufacturer TriQuint Semiconductor
Description 6 - 18 GHz 2.8 Watt Power Amplifier
Published Jun 22, 2012
Detailed Description TGA2501-TS 6 - 18 GHz 2.8 Watt Power Amplifier Key Features and Performance • • • • • • • 34.5 dBm Midband Pout 24 dB No...
Datasheet PDF File TGA2501-TS PDF File

TGA2501-TS
TGA2501-TS

Overview
TGA2501-TS 6 - 18 GHz 2.
8 Watt Power Amplifier Key Features and Performance • • • • • • • 34.
5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss Bias Conditions: 8 V @ 1.
2 A 0.
25 µm Ku pHEMT 2MI Thermal Spreader dimensions: 4.
445 x 3.
023 mm Preliminary Measured Performance Bias Conditions: VD = 8 V ID = 1.
2 A Primary Applications • • X-Ku Point-to-Point ECCM Product Description TriQuint’s TGA2501-TS is a wideband power amplifier fabricated on TriQuint’s productionreleased 0.
25um power pHEMT process.
Operating from 6 to 18Ghz, it achieves 34.
5dBm of saturated output power, 25% efficiency and 24dB of small signal gain.
The TGA2501-TS is pre-assembled to a CuMo carrier (or Thermal Spreader) for improved thermal management and ease of handling.
Using AuSn solder and a vacuum reflow process, attachment is made with minimal voiding and screened via x-ray to ensure acceptable attach.
Fully matched to 50 ohms, RoHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2501-TS is ideally suited to support both commercial and defense related opportunities.
The TGA2501-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications.
www.
DataSheet.
net/ 1 TriQuint Semiconductor: www.
triquint.
com (972)994-8465 Fax (972)994-8504 Info-products@tqs.
com November 2011 © Rev B Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ TGA2501-TS TABLE I ABSOLUTE MAXIMUM RATINGS 1/ Symbol V I + - Parameter Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Mounting Temperature (30 Seconds) Storage Temperature Value 9V -5 V to 0 V 2.
0 A 52 mA 26 dBm 18.
0 W 200 °C 320 °C -65 to 150 °C Notes V + | IG | PIN PD Tchannel Channel Temperature 2/ 1/ These ratings represent the maximum operable values for this device.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)