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TGA2527-SM

TriQuint Semiconductor
Part Number TGA2527-SM
Manufacturer TriQuint Semiconductor
Description Ku-Band Power Amplifier
Published Jun 22, 2012
Detailed Description TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Frequ...
Datasheet PDF File TGA2527-SM PDF File

TGA2527-SM
TGA2527-SM


Overview
TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Frequency Range: 12.
5 – 15.
5 GHz TOI: 41 dBm Power: 31.
5 dBm Psat, 30 dBm P1dB Gain: 25 dB Return Loss: 10 dB NF: 7.
5 dB Integrated Power Detector Bias: Vd = 6 V, Id = 650 mA, Vg = -0.
55 V Typical Package Dimensions: 5.
0 x 5.
0 x 0.
85 mm Functional Block Diagram 24 23 22 21 20 19 1 2 3 4 5 6 18 17 16 15 14 13 7 www.
DataSheet.
net/ 8 9 10 11 12 General Description The TriQuint TGA2527-SM is a Ku-Band Packaged Power Amplifier.
The TGA2527-SM operates from 12.
5 to 15.
5 GHz and is designed using TriQuint’s power pHEMT production process.
The TGA2527-SM typically provides 41dBm of TOI at 20dBm Pout/Tone, 30 dBm of output power at 1dB gain compression, and the small signal gain is 25 dB.
The TGA2527-SM is available in a low-cost, surface mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and Ku-Band VSAT Ground Terminal.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration Pin # 1, 2, 3, 5, 6, 9, 12, 13, 14, 15, 17 4 7, 8, 23, 24 16 10, 11, 20, 21 18 19 22 Symbol N/C RF IN Vg RF OUT Vd Vref Vdet GND Ordering Information Part No.
TGA2527-SM ECCN 3A001.
b.
2.
c Description Ku-band Power Amplifier Standard T/R size = 500 pieces on a 7” reel.
Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc.
- 1 of 13 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ TGA2527-SM Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Parameter Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature Recommended Operating Conditions Parameter Vd Id Id_drive (Under RF Drive) Vg Rating +8 V -3 to 0 V 1.
12 A -5.
5 to 88 mA 9W 24 dBm 20...


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