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T1G6000528-Q3

TriQuint Semiconductor
Part Number T1G6000528-Q3
Manufacturer TriQuint Semiconductor
Description GaN RF Power Transistor
Published Jul 1, 2012
Detailed Description T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commerci...
Datasheet PDF File T1G6000528-Q3 PDF File

T1G6000528-Q3
T1G6000528-Q3

Overview
T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers –– Test instrumentation –– Cellular infrastructure Available Package Product Features • Frequency: DC to 6 GHz • Linear Gain: >10 dB at 6 GHz • Operating Voltage: 28 V • Output Power (P3dB): >7 W at 6 GHz • Lead-free and RoHS compliant • Low thermal resistance package Package Information Package Type Q3 Description 5.
0mm x 4.
0mm ceramic air cavity straight lead package Base CuMo www.
DataSheet.
net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.
25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Ordering Information Material No.
1075579 1081733 Part No.
T1G6000528-Q3 T1G6000528-Q3EVB3 Description Packaged part Narrowband 3.
0 to 3.
5 GHz evaluation board ECCN EAR99 EAR99 Released Datasheet: Rev.
K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc.
–1– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ T1G6000528-Q3 Specifications Absolute Maximum Ratings1 Sym V+ V I |IG| PD TCH Notes: 1 2 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Parameter Positive Supply Value2 Negative Supply Voltage Range Positive Supply Current2 Gate Supply Current Power Dissipation2 Operating Channel Temperature2 Value 28 - 10 V to 0 V 0.
8 A 12.
5 mA 10 W 200°C - Absolute maximum ratings at 3 GHz Absolute maximum ratings are set based on industry...


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