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TGF4230-SCC

Part Number	TGF4230-SCC
Manufacturer	TriQuint Semiconductor
Description	1.2 mm HFET
Published	Jul 1, 2012
Detailed Description	Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • No...
Datasheet	TGF4230-SCC PDF File

Overview

Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.
5 dBm at 8.
5 GHz Nominal Gain of 10.
0 dB at 8.
5 GHz Nominal PAE of 55 % at 8.
5 GHz 1200 µm HFET 0.
61 x 0.
74 x 0.
1 mm (0.
024 x 0.
029 x 0.
004 in) Bias at 8 Volts, 96 mA Primary Applications • • • Cellular Base Stations High dynamic-range LNAs Military and Space Description www.
DataSheet.
net/ The TriQuint TGF4230-SCC is a single gate 1.
2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.
The TGF4230-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.
triquint.
com 1 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ Product Data Sheet December 16, 2002 TGF4230-SCC TABLE I MAXIMUM RATINGS SYMBOL VDS VGS PD TCH TSTG TM PARAMETER 1/ Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mounting Temperature (30 seconds) VALUE 12 V 0 to -5.
0 Volts See Thermal Data 150°C -65 to 150°C 320°C NOTES 2/, 3/ 1/ These ratings represent the maximum values for this device.
Stresses beyond those listed under “Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “DC Probe Characteristics” and “Electrical Characteristics” is not implied.
Exposure to maximum rated conditions for extended periods may affect device reliability.
2/ Junction temperature will directly affect the device Mean Time to...

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TGF4230-SCC 1.2 mm HFET - TriQuint Semiconductor

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