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RJH60F6DPQ-A0

Renesas
Part Number RJH60F6DPQ-A0
Manufacturer Renesas
Description High Speed Power Switching
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching Features  Low collector to emitter ...
Datasheet PDF File RJH60F6DPQ-A0 PDF File

RJH60F6DPQ-A0
RJH60F6DPQ-A0

Overview
Preliminary Datasheet RJH60F6DPQ-A0 600 V - 45 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.
35 V typ.
(at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ.
(at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0327EJ0200 Rev.
2.
00 Jul 22, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
...


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