Part Number RJH1CD5DPQ-E0
Manufacturer Renesas
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ...
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
 Built-in fast recovery diode (trr = 200 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching tf = 100 ns typ. (at V...

File Size 110.38KB
Datasheet RJH1CD5DPQ-E0 PDF File

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