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RJH1CD6DPQ-A0

Renesas
Part Number RJH1CD6DPQ-A0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application: Inverter Features  Short circuit withstand time ...
Datasheet PDF File RJH1CD6DPQ-A0 PDF File

RJH1CD6DPQ-A0
RJH1CD6DPQ-A0

Overview
Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 2.
2 V typ.
(at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (trr = 100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 100 ns typ.
(at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0452EJ0100 Rev.
1.
00 Jul 22, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tc = 25C Symbol VCES / VR VGES IC IC ic(peak) Note1 IDF iDF(peak) Note1 PC Note2 j-c Note2 Tj Tstg Ratings 1200 30 40 20 80 20 80 297.
6 0.
42 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C R07DS0452EJ0100 Rev.
1.
00 Jul 22, 2011 Page 1 of 3 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJH1CD6DPQ-A0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES/IR IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf tsc Min — — 4 — — — — — — — — — Typ — — — 2.
2 1600 60 35 45 15 100 100 5 Max 5 ±1 8 — — — — — — — — — Unit A A V V pF pF pF ns ns ns ns s Test Conditions VCE = 1200 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 20 A, VGE = 15...


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