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RJH1CF7RDPQ-80

Part Number	RJH1CF7RDPQ-80
Manufacturer	Renesas
Description	High Speed Power Switching
Published	Jul 20, 2012
Detailed Description	Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circu...
Datasheet	RJH1CF7RDPQ-80 PDF File

Overview

Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.
85 V typ.
(at IC = 35 A, VGE = 15V, Ta = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating • • • • R07DS0357EJ0100 Rev.
1.
00 May 12, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
Symbol VCES VGES IC IC ic(peak) Note1 iDF PC θj-c Tj Tstg Rati...

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RJH1CF7RDPQ-80 High Speed Power Switching - Renesas

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