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RJH1DF7RDPQ-80

Part Number	RJH1DF7RDPQ-80
Manufacturer	Renesas
Description	High Speed Power Switching
Published	Jul 20, 2012
Detailed Description	Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonan...
Datasheet	RJH1DF7RDPQ-80 PDF File

Overview

Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.
95 V typ.
(at IC = 35 A, VGE = 15 V, Tj = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating R07DS0413EJ0100 Rev.
1.
00 May 18, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1.
Gate 2.
Collector 3.
Emitter 4.
Collector E 1 2 3 www.
DataSheet.
net/ Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
Symbol VCES VGES IC IC ic(peak) Note1 iDF PC θj-c Tj Tstg Ratings 1350 ±30 60 35 100 25 250 0.
5 150 –55 to +150 Unit V V A A A A W °C/W °C °C R07DS0413EJ0100 Rev.
1.
00 May 18, 2011 Page 1of 6 Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ RJH1DF7RDPQ-80 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tr td(off) tf C-E diode forward voltage Notes: 2.
Pulse test VF Min ⎯ ⎯ 3.
5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.
95 3330 62 50 58 78 144 208 3.
4 Max 100 ±1 7.
0 2.
55 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 4.
4 Unit μA μA V V pF pF pF ns ns ns ns V Test Conditions VCE = 1350 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 35 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 V f = 1 MHz IC = 35 A VCE = 600 V, VGE = 15 V Rg = 5 Ω Note2 Resistive Load IF = 10 A Note2 www.
DataSheet.
net/ R07DS0413EJ0100 Re...

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