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RJH60M1DPP-M0

Renesas
Part Number RJH60M1DPP-M0
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.3.00 May 25, 2012 Feat...
Datasheet PDF File RJH60M1DPP-M0 PDF File

RJH60M1DPP-M0
RJH60M1DPP-M0

Overview
Preliminary Datasheet RJH60M1DPP-M0 600V - 8A - IGBT Application: Inverter R07DS0528EJ0300 Rev.
3.
00 May 25, 2012 Features  Short circuit withstand time (8 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
9 V typ.
(at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (75 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1 23 1.
Gate 2.
Collector G 3.
Emitter E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter volta...


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